Materials

Stacking-Engineered Switchable Altermagnetism in Topological FeSe bilayer systems

Jie Li, Shifang Li, Mengyang Zhang, Pan Zhou, Jianxin Zhong, Ruqian Wu

Featured June 23, 2026

AI-generated analysis — This is SciGrove's AI interpretation of the paper, not peer-reviewed content. Always refer to the original paper.

Simply

Stacking two layers of iron-based superconductors creates a special magnetic material that can be switched on and off, allowing scientists to control electronic signals for future high-speed computers.

In depth

The paper introduces a method to engineer altermagnetism in bilayer FeSe and FeTe systems by manipulating stacking configurations. By breaking spin-space symmetries through specific interlayer arrangements, the authors demonstrate that these materials exhibit topological properties and switchable spin-splitting, which can be further tuned via strain engineering to control valley-polarized anomalous Hall physics.

Key Takeaways

1
The authors identify bilayer FeSe and FeTe as a topological altermagnetic platform with room-temperature stability.
2
Stacking engineering allows for the reversible switching of altermagnetic states by flipping the interlayer spin order.
3
Strain-induced modulation of the interlayer exchange interaction enables precise control over spin-splitting and valley polarization.

Conceptual Flow

HIGH LEVEL

Methodology

The researchers stack two layers of magnetic material in a specific way to break symmetry and create a new magnetic state.

Two Magnetic Layers

Stacking and Symmetry Breaking

Switchable Altermagnet

Topological State

Results

Applying physical pressure to the material changes how the layers interact, allowing for precise control of the magnetic properties.

Altermagnetic Bilayer

Apply Physical Strain

Enhanced Spin Splitting

Valley Polarization

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